Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1991-11-12
1994-05-24
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257246, 257248, 257250, H01L 29796
Patent
active
053151372
ABSTRACT:
The present invention relates to a charge transfer device having high transfer efficiency without leaving over signal charges, a charge transfer device substantially shortened in the gate length so as to enhance the transfer speed, and a method of manufacturing and a method of driving such device. In the charge transfer device of the invention, the n.sup.- diffusion layer is formed on the semiconductor substrate. In the surface region of the n.sup.- diffusion layer, a plurality of n diffusion layers are formed at equal intervals. The interval of the adjacent n diffusion layers is about 5 to 10 .mu.m. On the n.sup.- diffusion layer, an insulation film is formed. On the insulation film, transfer electrodes having two different shapes are formed. The transfer electrodes of these two types are alternately arranged. These transfer electrodes differ in length. The length of the longer transfer electrodes is about twice the length of the shorter transfer electrodes. Furthermore, the right end of the n diffusion layer nearly coincides with the right end of the longer transfer electrodes formed on the gate oxide film in the spatial position.
REFERENCES:
patent: 3796932 (1974-03-01), Amelio et al.
patent: 4691218 (1987-09-01), Boudewijns
patent: 4910569 (1990-03-01), Erhardt
patent: 4992842 (1991-02-01), Yang et al.
patent: 5065203 (1991-11-01), Yang et al.
Asaumi Masaji
Kuroda Takao
Matsushita Electronics Corporation
Munson Gene M.
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