Charge transfer device having an output gate electrode extending

Details Charge transfer device having an output gate electrode extending Charge transfer device having an output gate electrode extending

1995-06-07

1996-07-23

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257250, 377 59, 377 60, 377 62, H01L 27148, H01L 29768

Patent

active

055392261

ABSTRACT:
A charge transfer device formed on a semiconductor substrate comprising: a charge transfer section formed on the semiconductor substrate for transferring charges, a floating gate having a floating gate diffusion layer formed on the semiconductor substrate for accumulating the charges transferred from the charge transfer section, an output gate section formed between the charge transfer section and the floating gate on the semiconductor substrate, and a charge detecting circuit electrically connected to the floating gate for outputting a voltage corresponding to the amount of the charges accumulated in the floating gate diffusion layer, the output gate section having a first output gate region adjacent to the charge transfer means and a second output gate region adjacent to the floating gate diffusion layer, the first output gate region having a first output gate electrode formed thereon with an insulating film therebetween, the second output gate region having a second output gate electrode formed thereon with an insulating film therebetween, a dc voltage being applied to the gate electrode, and an output voltage being applied to the second output gate electrode from the charging detecting circuit.

REFERENCES:
patent: 4171521 (1979-10-01), Wang et al.
patent: 4939560 (1990-07-01), Narabu et al.
patent: 5227650 (1993-07-01), Noguchi et al.
patent: 5229630 (1993-07-01), Hamasaki

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