Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1994-03-31
1995-08-01
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257223, 257229, 257230, 257249, H01L 2978
Patent
active
054382114
ABSTRACT:
A charge-transfer device contains a high-resistance p-well layer formed in the surface of an n-type semiconductor substrate. In the surface of the well layer, a charge-transfer n-channel layer, a charge storage n-channel layer, a charge release n-channel layer, and a charge release n-type drain are formed continuously. An output gate electrode is provided above the junction of the transfer channel layer and the storage channel layer, with an insulating film interposed therebetween. Provided above the release channel layer is a reset gate electrode with an insulating film interposed therebetween. In the surface of the storage channel layer, a charge-sensing p-channel layer of a charge-sensing transistor is formed. The charge-sensing channel layer is arranged so as to be in contact with neither the transfer channel layer nor the release channel layer. The storage channel layer is arranged so as to contain a first surface portion which adjoins the transfer channel layer and is in contact with a covering insulating film, and a second surface portion which adjoins the release channel layer and is in contact with the covering insulating film. In the surface of the substrate, a p-type source and drain layers of the charge-sensing transistor are formed so as to face each other with the sensing channel interposed therebetween. The potential of the storage channel layer without charges is set higher than that of the release drain layer.
REFERENCES:
patent: 4984045 (1991-01-01), Matsunaga
W. F. Kosonocky, J. E. Carnes, "Basic Concepts of Charge-Coupled Devices", RCA Review, vol. 36, p. 566, Sep. 1975.
R. J. Brewer, "A Low Noise CCD Output Amplifier", IEDM Dig. Tech. Papers. 1978, pp. 610-612.
Endo Yukio
Koya Yoshihito
Matsunaga Yoshiyuki
Nakamura Nobuo
Kabushiki Kaisha Toshiba
Ngo Ngan V.
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