Charge transfer device having a plurality of vertical and horizo

Details Charge transfer device having a plurality of vertical and horizo Charge transfer device having a plurality of vertical and horizo

1994-09-09

1997-07-22

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257241, 257243, 257250, H01L 27148

Patent

active

056506449

ABSTRACT:
A charge transfer device has trapezoidal shape impurity-implanted regions (1, 51, . . . ) in n-type regions (271, 371) at least in the through-paths between a first HCCD (27) and a second HCCD (28), and its isolation regions (41) under the transfer gate (29) are trapezoidal shaped, and thereby charge transfer loss and hence FPN is minimized and the transfer efficiency is much improved.

REFERENCES:
patent: 4965648 (1990-10-01), Yang et al.
patent: 4987466 (1991-01-01), Shibata et al.
patent: 5040071 (1991-08-01), Stevens
patent: 5093849 (1992-03-01), Goto
patent: 5164807 (1992-11-01), Thenwissen
E. Oda et al; "1/2 Inch 768(H)X492(V) Pixel CCD Image Sensor",. IEDM 85, pp. 444-447; 1985 IEEE.

Affiliated with

Also associated with

Rating

Charge transfer device having a plurality of vertical and horizo does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Charge transfer device having a plurality of vertical and horizo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Charge transfer device having a plurality of vertical and horizo will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1561571