Charge transfer device having a high-resistance electrode and a

Details Charge transfer device having a high-resistance electrode and a Charge transfer device having a high-resistance electrode and a

1993-10-29

1995-09-19

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257241, 257249, H01L 2978

Patent

active

054518024

ABSTRACT:
A charge transfer device is provided, which includes: a semiconductor substrate having transfer regions for transferring a signal charge; an insulating film formed on the semiconductor substrate; an electrode layer formed above the transfer regions with the insulating film sandwiched therebetween, the electrode layer having high-resistant portions and low-resistant portions alternately provided; and voltage application means for applying a voltage for changing a surface potential of the transfer regions to the low-resistant portions of the electrode layer.

REFERENCES:
patent: 3836409 (1974-09-01), Amelio et al.
patent: 3853634 (1974-12-01), Amelio et al.
patent: 3943545 (1976-03-01), Kim
patent: 4156247 (1979-05-01), Hartman et al.
patent: 4206372 (1980-06-01), Levine
patent: 4319261 (1982-03-01), Kub
patent: 4910569 (1990-03-01), Erhardt

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