Charge transfer device having a buried transfer channel with hig

Details Charge transfer device having a buried transfer channel with hig Charge transfer device having a buried transfer channel with hig

1981-06-16

1989-12-19

Munson, Gene M.

Electrical pulse counters, pulse dividers, or shift registers: c

Counting or dividing in incremental steps

Beam type tube

377 58, H01L 2978, G11C 1828

Patent

active

048886335

ABSTRACT:
A charge transfer device comprising a semiconductor body including a first conductivity type region and a second conductivity region which defines a charge transfer channel below a major surface of the semiconductor body. An insulative layer is provided on the major surface. A plurality of electrodes is attached to the insulative layer to produce potential wells in response to application of different potentials thereto with respect to a common electrode attached to the opposite surface of the semiconductor body. The n-type conductivity charge transfer channel includes a center section of lower impurity concentration and a peripheral section of higher impurity concentration which substantially eliminates the undesirable lateral field effect which would otherwise occur in an area adjacent to the boundary with the first conductivity region.

REFERENCES:
patent: 3852799 (1974-12-01), Walden
patent: 4012759 (1977-03-01), Esser
patent: 4110777 (1978-08-01), Esser et al.

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