Charge transfer device having a bent transfer channel

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

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Details

257240, 257248, 257250, 377 60, H01L 29796, G11C 1928

Patent

active

053090055

ABSTRACT:
A charge transfer device has a transfer section for transferring a signal charge along a transfer channel, and a pickup section connected to the transfer section for converting the signal charge received from the transfer section to a voltage signal, both sections being formed on a substrate. The transfer channel is bent generally at a right angle between the transfer section and the pickup section.

REFERENCES:
patent: 4403237 (1983-09-01), Ohkubo et al.
patent: 4660064 (1987-04-01), Hamasaki
patent: 4698656 (1987-10-01), Kamata
patent: 4903098 (1990-02-01), Smit et al.
patent: 4993053 (1991-02-01), Itoh et al.
patent: 5091922 (1992-02-01), Uehira
patent: 5173757 (1992-02-01), Miwada
Kinugawa, et al.-IEDM Technical Digest, pp. 581-584 (1985).

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