Charge transfer device for increasing data rate and reducing...

Television – Camera – system and detail – Solid-state image sensor

Reexamination Certificate

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Details

C348S303000, C348S312000

Reexamination Certificate

active

07079183

ABSTRACT:
A charge transfer device having: a semiconductor substrate; a charge transfer path formed in the semiconductor substrate and made of a first conductivity type semiconductor layer; a plurality of charge transfer electrodes formed near above the charge transfer path; and a first pulse signal generator circuit for applying either a first pulse signal train for n-phase (n being an integer larger than 1) driving of charges in the charge transfer path to the charge transfer electrodes or a second pulse signal train for (n+1)-phase driving of charges in the charge transfer path to the charge transfer electrodes.

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patent: 6075565 (2000-06-01), Tanaka et al.
patent: 6130420 (2000-10-01), Tanaka et al.
patent: 6211507 (2001-04-01), Kawai
patent: 6583818 (2003-06-01), Toma
patent: 2002/0118291 (2002-08-01), Ishigami et al.
patent: 0 668 691 (1995-02-01), None
patent: 0 668 691 (1995-09-01), None
patent: 11-164206 (1997-01-01), None
patent: 10-304250 (1998-11-01), None
patent: 11-122535 (1999-04-01), None
patent: 11-164206 (1999-06-01), None

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