Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1992-10-23
1993-06-29
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257222, 257262, 257271, 257285, 257286, 377 60, H01L 2978, G11C 1928
Patent
active
052237257
ABSTRACT:
A charge transfer device is equipped with a junction type field effect transistor coupled with the final stage of a transfer shift register for modulating current flowing therethrough depending upon the amount of electric charge from the transfer shift register, and the junction type field effect transistor comprises an n-type looped gate region formed in a p-type well, a p-type source region surrounded by the looped gate region, a p-type drain region opposite to the source region with respect to the looped gate region, and a p-type channel region defined in the p-type well beneath the looped gate region, wherein the p-type channel region is shallower or smaller in dopant concentration than remaining portion of the p-type well so that the current is effectively modulated with the electric charge.
REFERENCES:
patent: 3918070 (1975-11-01), Shannon
patent: 4074302 (1978-02-01), Brewer
patent: 4672645 (1987-06-01), Bluzer
Munson Gene M.
NEC Corporation
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