Charge transfer device capable of suppressing reset noise

Details Charge transfer device capable of suppressing reset noise Charge transfer device capable of suppressing reset noise

1993-05-20

1995-08-22

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

377 60, H01L 29796, G11C 1928

Patent

active

054442818

ABSTRACT:
In a charge transfer device incorporating a charge-coupled device, a junction type field-effect transistor, and a reset transistor, the junction type field-effect transistor includes a source region in contact with a junction gate region and a drain region in contact with the junction gate region. The charge-coupled device has an output gate electrode on a first insulation film formed on a surface of a transfer channel region which is formed in contact with the junction gate region. The reset transistor has a reset gate electrode adjacent to the junction gate region with a second insulation film interposed between the junction gate region and the reset gate electrode. A first distance between the source region and each of the output gate electrode and the reset gate electrode is longer than a second distance between the source region and the drain region.

REFERENCES:
patent: 4074302 (1978-02-01), Brewer
patent: 5223723 (1993-06-01), Miwada
patent: 5229630 (1993-07-01), Hamasaki

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