Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1997-01-07
1998-06-02
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257231, 257232, 257233, 257238, 257245, 377 61, 377 62, 348295, H01L 27148, H01L 29768
Patent
active
057604304
ABSTRACT:
A charge transfer device is disclosed in which the number of transfer clocks can be decreased, and also, power consumption, the heating amount and parasitic emissions are also reduced. Three groups of electrodes are repeatedly disposed in an alternating sequence above an N-type channel (transfer channel). Among the three groups of electrodes, a predetermined DC bias voltage supplied from a DC power supply is applied to one group of electrodes. Between the remaining two groups of electrodes, a single-phase transfer clock H.phi. supplied from the exterior of the device is directly applied to one group of electrodes, while a transfer clock H.phi.' produced by delaying the transfer clock H.phi. by a predetermined delay time in a delay circuit is applied to the other group of electrodes. Also disclosed is a solid-state imaging apparatus using the above-described charge transfer device.
REFERENCES:
patent: 4047216 (1977-09-01), French
patent: 4280068 (1981-07-01), Snijder
patent: 4324988 (1982-04-01), Takemura et al.
patent: 5521405 (1996-05-01), Nakashiba
Kananen Ronald P.
Ngo Ngan V.
Sony Corporation
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