Charge transfer device and solid state image sensor using the sa

Details Charge transfer device and solid state image sensor using the sa Charge transfer device and solid state image sensor using the sa

1993-03-30

1994-10-25

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257218, 257224, 257233, 257239, 257241, 257250, 257455, H01L 29796, H01L 2714, H01L 3100

Patent

active

053592131

ABSTRACT:
A charge transfer device and a solid state image sensor using the same, capable of transferring signal charge at a high signal to noise ratio (S/N ratio) and preventing an occurrence of dark current. They include a double-layered charge transfer path structure provided by forming a surface channel region on a buried channel region formed in a semiconductor substrate, the surface channel region having a conductivity opposite to that of the buried channel region. The surface channel region of the doubled-layered structure is used for accumulating dark current generated from boundary surfaces between the substrate and a gate insulating film, whereas the buried channel region is used for transferring optical signal charge. Where minus and/or plus drive voltages are applied to the transfer electrodes, there is no increase in dark current, in accordance with the present invention. The quantity of transferred signal charge can be greatly increased.

REFERENCES:
patent: 4223329 (1980-09-01), Jambotkar
patent: 4229754 (1980-10-01), French
patent: 4468684 (1984-08-01), Esser et al.
patent: 4613895 (1986-09-01), Burkey et al.
Barsaw "Characteristics of the Overland Charge-Coupled Device" IEEE Trans. Electron Devices vol. ED-26 (Feb. 1979) pp. 123-134.

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