Charge transfer device and solid-state image pickup device

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure

Reexamination Certificate

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Details

C257S080000, C257S083000, C257S187000, C257S222000, C257S225000, C257S231000, C257S291000

Reexamination Certificate

active

10974619

ABSTRACT:
In a charge transfer device which has many two-layered transfer electrodes,8L disposed along a charge transfer direction X above a transfer channel is driven with two-phase driving pulses supplied to the transfer electrodes of the second layer, the transfer channel below the last-stage transfer electrode disposed at the last stage of the charge transfer direction X is constructed to have three-step potential, and the potential is set to be stepwise deeper from the upstream side to the downstream side in the charge transfer direction X.

REFERENCES:
patent: 4158209 (1979-06-01), Levine
patent: 4731656 (1988-03-01), Dischert et al.
patent: 5103278 (1992-04-01), Miwada
patent: 5239192 (1993-08-01), Hirota
patent: 5401679 (1995-03-01), Fukusho
patent: 5521405 (1996-05-01), Nakashiba
patent: 6417531 (2002-07-01), Nakashiba
patent: 6510193 (2003-01-01), Kochi et al.

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