Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2007-08-28
2007-08-28
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S080000, C257S083000, C257S187000, C257S222000, C257S225000, C257S231000, C257S291000
Reexamination Certificate
active
10974619
ABSTRACT:
In a charge transfer device which has many two-layered transfer electrodes,8L disposed along a charge transfer direction X above a transfer channel is driven with two-phase driving pulses supplied to the transfer electrodes of the second layer, the transfer channel below the last-stage transfer electrode disposed at the last stage of the charge transfer direction X is constructed to have three-step potential, and the potential is set to be stepwise deeper from the upstream side to the downstream side in the charge transfer direction X.
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Depke Robert J.
Louie Wai-Sing
Rockey, Depke & Lyons LLC.
Sony Corporation
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