Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1998-05-26
2000-12-05
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257236, 257240, H01L 27148, H01L 29768
Patent
active
061570532
ABSTRACT:
There is provided a charge transfer device including (a) a charge transfer channel for transferring signal charges therethrough, (b) a floating diffusion region for accumulating therein charges transferred from the charge transfer channel, (c) a field effect transistor for resetting the floating diffusion region so that the floating diffusion region is at a predetermined potential and (d) a bias charge input section through which a bias charge is supplied and which is connected to either the charge transfer channel or the floating diffusion region. The field effect transistor includes a reset gate electrode and a reset drain. The charge transfer channel located below the reset gate electrode is designed to receive either a potential lower than a potential of the reset drain when the floating diffusion region is reset in the case that charges to be transferred are electrons, or a potential higher than a potential of the reset drain when the floating diffusion region is reset in the case that charges to be transferred are holes. The above-mentioned charge transfer device ensures to reset the floating diffusion region regardless of whether a potential in the reset drain is greater or smaller than a potential in a channel located below the reset gate electrode.
REFERENCES:
patent: 4350976 (1982-09-01), Benoit-Gonin et al.
patent: 5416346 (1995-05-01), Nagakawa et al.
patent: 5453783 (1995-09-01), Weir
patent: 5477070 (1995-12-01), Nam
"Solid- State Image Sensor" published through Shokodo 1986; pp. 73-77.
"Solid-State Imaging with Charge-Coupled Devices" published through Kluwe Academic Publishers; 1995; pp. 76-79.
NEC Corporation
Ngo Ngan V.
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