Patent
1989-08-21
1990-10-16
Macon, Robert S.
H01L 2978
Patent
active
049639536
ABSTRACT:
A charge transfer device in which, during manufacture, a first upper electrode does not entirely cover a space separating two lower electrodes, and the zone thus left free is filled by a conductive material of the same type as the first upper electrode part. The method according to the invention allows simple manufacture without restrictions as to the positioning of the masks for manufacturing the electrodes, and allows manufacture without covering of the upper and lower electrodes, thereby allowing to reduce the stray capacities.
REFERENCES:
RCA Review, vol. 34, No. 1, Mar. 1973, pp. 164-202, Princeton, N.J., U.S.; W. F. Kosonocky et al.: "Two-phase Chargecoupled Devices with Overlapping Polysilicon and Aluminium gates".
Fujitsu Scientific & Technical Journal, vol. 11, No. 3, Sep. 1975, pp. 79-99, Kawasaki, JP; H. Sei et al.
Fujitsu Scientific & Technical Journal, vol. 11, No. 3, Sep. 1975, pp. 101-119, Kawasaki, JP; K. Tanikawa et al.
Blanchard Pierre
Carquet Michel
"Thomson-CSF"
Macon Robert S.
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