Charge transfer device and method for producing such a device

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

H01L 2978

Patent

active

049639536

ABSTRACT:
A charge transfer device in which, during manufacture, a first upper electrode does not entirely cover a space separating two lower electrodes, and the zone thus left free is filled by a conductive material of the same type as the first upper electrode part. The method according to the invention allows simple manufacture without restrictions as to the positioning of the masks for manufacturing the electrodes, and allows manufacture without covering of the upper and lower electrodes, thereby allowing to reduce the stray capacities.

REFERENCES:
RCA Review, vol. 34, No. 1, Mar. 1973, pp. 164-202, Princeton, N.J., U.S.; W. F. Kosonocky et al.: "Two-phase Chargecoupled Devices with Overlapping Polysilicon and Aluminium gates".
Fujitsu Scientific & Technical Journal, vol. 11, No. 3, Sep. 1975, pp. 79-99, Kawasaki, JP; H. Sei et al.
Fujitsu Scientific & Technical Journal, vol. 11, No. 3, Sep. 1975, pp. 101-119, Kawasaki, JP; K. Tanikawa et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Charge transfer device and method for producing such a device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Charge transfer device and method for producing such a device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Charge transfer device and method for producing such a device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-853474

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.