Charge transfer device and method for manufacturing the same

Details Charge transfer device and method for manufacturing the same Charge transfer device and method for manufacturing the same

1998-06-29

2000-08-01

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257248, H01L 29768

Patent

active

060970448

ABSTRACT:
In a charge transfer device of the two-layer electrode, two-phase drive type, an N.sup.-- semiconductor region 108 and a first insulator film 103 are formed on a P-type semiconductor substrate 101 in the named order. Then, first transfer electrodes 104A are formed on the first insulator film 103, and a second insulator film 105 is formed on the surface of the N.sup.-- semiconductor region 108 and a third insulator film 105 is formed on a top surface and a side surface of each first transfer electrode 104A. Phosphorus is ion-implanted with an incident angle of 0 degree, so that an N-type semiconductor region 102A is formed in N.sup.-- semiconductor region 108 between the first transfer electrodes 104A in self-alignment. Second transfer electrodes 109A are formed, and an interlayer insulator 110 is formed on the whole, and metal interconnections 111-1A and 111-2A are formed. Thus, the potential recess occurring under the gap between the first transfer electrode and the second transfer electrode can be minimized or prevented. Accordingly, the drive voltage can be lowered without lowering the transfer efficiency of the signal charge.

REFERENCES:
patent: 3852799 (1974-12-01), Walden
patent: 4992842 (1991-02-01), Yang et al.
patent: 5065203 (1991-11-01), Yang et al.
patent: 5221852 (1993-06-01), Nagai et al.
patent: 5289022 (1994-02-01), Iizuka et al.
patent: 5315137 (1994-05-01), Aaumi et al.
patent: 5442208 (1995-08-01), Bosiers et al.
C.K. Kim, "Two-Phase Charge Coupled Linear Imaging Devices With Self-Aligned Implanted Barrier", IEDM Technical Digest, 1974, pp. 55-58.

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