Charge transfer device and imaging apparatus

Details Charge transfer device and imaging apparatus Charge transfer device and imaging apparatus

2008-07-17

2009-10-20

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S215000, C257S223000, C257S229000, C257S234000, C257S235000, C257S237000, C257S240000, C257S241000, C257S249000, C257SE27082, C257SE27083, C257SE27150, C257SE27151, C257SE27152, C257SE27153, C257SE27154, C257SE27155, C257SE27156, C257SE27157, C257SE27158, C257SE27159, C257SE27160, C257SE27163, C257SE29227, C257SE29228, C257SE29234, C257SE29235, C257SE29236, C257SE29237, C257SE29238, C257SE29239, C257SE29240

Reexamination Certificate

active

07605411

ABSTRACT:
An HCCD includes a channel21that transfers electric charges in an X direction, a channel25that transfers the electric charges in a Z1direction, a channel23that transfers the electric charges in a Z2direction, and a channel22that connects the channels23, 25to the channel21. The following relation is satisfied in impurity concentration of the channels: channel21channel22channel23, 25. A fixed DC voltage is applied to branch electrodes12a, 12babove the channel22. The channel22has protrusion portions19that protrude inward from an outer circumference, which connects T1and T2, and an outer circumference, which connects T3and T4. The protrusion portions19causes charges below the transfer electrode11bto move near the center of the channel22in a Y direction. Thereby, the travel distance of the charges in the channel22is reduced.

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