Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1994-09-16
1995-12-19
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257231, 257236, 257248, 257250, H01L 2978
Patent
active
054770696
ABSTRACT:
The charge transfer device according to the present invention includes: a plurality of vertical transfer channels; a first transfer gate electrode placed at the ends of the plurality of vertical transfer channels for receiving signal charge from the plurality of vertical transfer channels and for outputting the signal charge; a plurality of horizontal transfer channels having a plurality of layers of gate electrodes for transferring the signal charge from the first transfer gate electrode in a horizontal direction; at least one second transfer gate electrode disposed between the plurality of horizontal transfer channels for transferring the signal charge from one of the horizontal transfer channels to another horizontal transfer channel; a conductive portion for supplying a transfer control signal to the plurality of horizontal transfer channels; at least one output section for converting the signal charge transferred from the plurality of horizontal transfer channels into a voltage signal and for outputting the thus obtained voltage signal; and a contact portion provided on at least one of the first and second transfer gate electrodes, through which at least one of the plurality of layers of the gate electrodes constituting the horizontal transfer channels and the conductive portion are in contact with each other.
REFERENCES:
patent: 5164807 (1992-12-01), Thenwissen
patent: 5189498 (1993-02-01), Sakakibara
Conlin David G.
Michaelis Brian L.
Ngo Ngan V.
Sharp Kabushiki Kaisha
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