Charge transfer device achieving a high charge transfer efficien

Details Charge transfer device achieving a high charge transfer efficien Charge transfer device achieving a high charge transfer efficien

1991-04-29

1992-04-07

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307304, 377 60, 377 68, H01L 2978

Patent

active

051032783

ABSTRACT:
A charge transfer device is fabricated on a semiconductor substrate of a first conductivity type and comprises a well formed in a surface portion of the semiconductor substrate and having a second conductivity type opposite to the first conductivity type, a charge transfer region of the first conductivity type formed in a surface portion of the well, a floating diffusion region of the first conductivity type formed in the surface portion of the well and contiguous to the charge transfer region, an insulating film covering the surface portion of the well, and a plurality of gate electrodes provided on the insulating film and applied with driving clocks in such a manner as to produce conductive channels in the charge transfer region for transferring electric charges toward the floating diffusion region, in which the channels in the vicinity of the floating diffusion region are gradually decreased in width toward the floating diffusion region, and in which impurity atoms of the well beneath the charge transfer region in the vicinity of the floating diffusion region are graded toward the floating diffusion region, so that the electric charges are allowed to be swept thereinto without any residual.

REFERENCES:
patent: 3796932 (1974-03-01), Amelio et al.
patent: 4499590 (1985-02-01), Bluzer
patent: 4839911 (1989-06-01), Boucharlat
patent: 4862235 (1989-08-01), Hayes et al.
patent: 4910569 (1990-03-01), Erhardt
patent: 4992842 (1991-02-01), Yang et al.

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