Charge transfer device

Details Charge transfer device Charge transfer device

1991-11-26

1994-02-15

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257220, 257246, 257248, H01L 2978

Patent

active

052869873

ABSTRACT:
In a charge transfer device having pairs of a first transfer electrode and a second transfer electrode on a semiconductor substrate, the ends of the second transfer electrode overlap the ends of the adjacent first transfer electrodes through an insulating film. A first region implanted with a first conductivity type is formed in the substrate, and a second region implanted with a second and different conductivity type is formed in the first region. The first region is disposed so that its upper stream end is positioned under a substantially medium portion of the first transfer electrode, and that the lower stream end of the first region is positioned under the upper stream end of the first transfer electrode of the succeeding electrode pair. The second region is disposed so that its upper stream end of the second region is positioned under the lower stream end of the first transfer electrode, and that the lower stream end of the second region is positioned under a substantially middle portion of the second transfer electrode.

REFERENCES:
patent: 4613402 (1986-09-01), Losee et al.
patent: 4709380 (1987-11-01), Itoh
C. Sequin, M. Tompsett "Charge Transfer Devices", Supplement Eight, Advances in Electronics and Electron Physics, 1975, pp. 32-38.

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