Charge transfer device

Details Charge transfer device Charge transfer device

1974-10-24

1976-01-13

Miller, Jr., Stanley D.

H01L 2978

Patent

active

039328821

ABSTRACT:
A two-phase semiconductor charge transfer device is constructed using electrodes which include both a highly resistive region and a highly conductive region. An array of such electrodes is overlayed on an insulating layer which has been deposited onto a semiconductor substrate. Alternate phases of an applied two-phase voltage source are applied to alternate electrodes in the array, thereby generating an electrical potential distribution in the semiconductor. Charge, in the form of minority carriers in the semiconductor, is stored in the minima of the potential distribution. When the voltage phases are pulsed, the potential in the regions beneath the highly conductive parts of the electrodes almost instantaneously changes value. However, in the regions beneath the highly resistive parts of the electrodes, the potential changes value much more slowly. As the potential varies, charge is transferred from the region under one electrode to the region under an adjacent electrode. The slower variation in the potential under the resistive regions provides a "potential shoulder" which prevents backward spilling of the charge in an undesired direction. Thus, directionality is imparted to the charge transfer.

REFERENCES:
IBM (Tech Bul.) -- Heller et al., Vol. 14, No. 2, July 1971 "Random Access Potential Ramp Memory for Charge Coupled Devices".
IBM (Tech. Bul.) -- Patrin, Vol. 14, No. 1, June 1971 "Minority Charge Detector".
IBM (Tech. Bul.) -- Anantha et al., Vol. 14, No. 4, Sept. 1971 "Unidirectional Charge-Coupled Shift Register".
IBM (Tech. Bul.) -- Vol. 13, No. 11, Apr. 1971 "Ramp Potential Mis Device".

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