Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2011-08-09
2011-08-09
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S144000, C438S147000, C438S512000, C257SE21457, C257SE21617
Reexamination Certificate
active
07993952
ABSTRACT:
A charge transfer device1has an P-type region, an N-type well provided to the surficial portion of the P-type region, and transfer electrodes having P-type conductivity, provided over the N-type substrate while placing an insulating film in between.
REFERENCES:
patent: 4133099 (1979-01-01), Hagiwara
patent: 4322753 (1982-03-01), Ishihara
patent: 4590506 (1986-05-01), Esser
patent: 5210433 (1993-05-01), Ohsawa et al.
patent: 5402459 (1995-03-01), Hynecek
patent: 5428231 (1995-06-01), Tanaka et al.
patent: 5514887 (1996-05-01), Hokari
patent: 6828601 (2004-12-01), Shinohara
patent: 7244971 (2007-07-01), Sakamoto et al.
patent: 7259394 (2007-08-01), Tachikawa
patent: 7378691 (2008-05-01), Geshi et al.
patent: 2006/0157756 (2006-07-01), Tanaka et al.
patent: 2001-196572 (2001-07-01), None
patent: 2001-308313 (2001-11-01), None
patent: 2004-022624 (2004-01-01), None
patent: 2005-209879 (2005-08-01), None
Lindsay, Jr. Walter L
Pompey Ron
Renesas Electronics Corporation
Young & Thompson
LandOfFree
Charge transfer device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Charge transfer device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Charge transfer device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2753826