Charge storage type semiconductor device and method for producin

Details Charge storage type semiconductor device and method for producin Charge storage type semiconductor device and method for producin

1983-11-15

1987-03-10

Munson, Gene M.

357 236, 357 30, 357 41, 357 47, 357 63, 357 64, H01L 2978, H01L 2702, H01L 2714, H01L 29167

Patent

active

046494081

ABSTRACT:
A charge storage type semiconductor device comprising a semiconductor substrate and means for accumulating charge in those portions of the substrate which are located in the vicinity of one of the major surfaces of the substrate. The substrate has a defect region of a high defect density and at least one defect free region having no crystal defects or a low defect density and formed in the vicinity of at least the major surface of the substrate. The defect region prevents unnecessary minority carriers from flowing into charge storage regions.

REFERENCES:
patent: 3726719 (1973-04-01), Brack et al.
patent: 4116719 (1978-09-01), Shimizu et al.
patent: 4210922 (1980-07-01), Shannon
patent: 4240843 (1980-12-01), Celler et al.
Anolick et al., "Reduction of Alpha Radiation Impact on CCD Memories" IBM Tech. Disclosure Bulletin vol. 22(11/79) p. 2355.

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