Charge storage structure for nonvolatile memories

Details Charge storage structure for nonvolatile memories Charge storage structure for nonvolatile memories

1986-07-16

1988-01-05

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 54, 365185, H01L 2976, H01L 2912, H01L 2914

Patent

active

047179430

ABSTRACT:
A four layer charge storage structure comprising alternate layers of silicon-rich silicon dioxide and silicon dioxide with electrode layers on top and bottom. The upper and middle silicon-rich layers act as enhanced Fowler-Nordheim injectors and the middle silicon-rich layer also stores charges since the silicon particles act as deep traps. The charge storage structure is applicable to nonvolatile memories.

REFERENCES:
patent: 3649884 (1972-03-01), Haneta
patent: 3878549 (1975-04-01), Yamazaki et al.
patent: 4253106 (1981-02-01), Goldsmith et al.
patent: 4399522 (1983-08-01), Kotecha
patent: 4471471 (1984-09-01), DiMaria

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