Charge storage depletion region discharge protection

Details Charge storage depletion region discharge protection Charge storage depletion region discharge protection

1986-12-04

1989-01-03

Buczinski, Stephen C.

Fishing, trapping, and vermin destroying

357 41, 357 58, 357 63, 357 91, 437 25, H01L 29167

Patent

active

H00005690

ABSTRACT:
A means and method is described for shielding semiconductor charge storage devices from the effects of particles or ionizing radiation absorbed within the bulk of the semiconductor substrate, by providing a free carrier shield consisting of a buried layer of very low lifetime in the undisturbed material below the depletion regions associated with the charge storage devices. The very low lifetime layer is obtained by ion implantation of a super-saturated zone of impurities such as oxygen which provide deep recombination centers and which react chemically with the substrate material so as to provide thermally stable complexes which do not anneal away during post implant heating cycles. Concentrations of lifetime killing impurities significantly exceeding the solid solubility limit are achieved so that the lifetime reduction in the carrier shield region greatly exceeds that obtainable by prior art methods. Partial shielding is also provided against carriers injected by nearby junctions or introduced by charge pumping during circuit operation.

REFERENCES:
patent: 3586542 (1971-06-01), MacRae
patent: 3622382 (1971-11-01), Brack et al.
patent: 4115798 (1978-09-01), Platzoeber
patent: 4247862 (1981-01-01), Klein
patent: 4259683 (1981-03-01), Abler et al.
patent: 4291329 (1981-09-01), Hanes et al.
patent: 4300107 (1981-11-01), Copeland, III
patent: 4420872 (1983-12-01), Solo De Zaldivar
patent: 4469528 (1984-09-01), Berth et al.
patent: 4490182 (1984-12-01), Scovell
patent: 4494996 (1985-01-01), Ohno et al.
patent: 4505759 (1985-03-01), O'Mara
patent: 4548654 (1985-10-01), Tobin
Brack et al., "Prevention of .alpha.-Particle Induced Fails in Dynamic Memories," IBM Technical Disclosure Bulletin, vol. 22, No. 9, Feb. 1980, p. 4106.
Anantha et al., "Process to Fabricate A Bipolar With Reduced Alpha Particle Damage," IBM Technical Disclosure Bulletin, vol. 22, No. 12, May 1980, pp. 5365-5366.
Chakravarti et al., "Processing of Low Leakage/Ser-Tolerant Si Wafers," IBM Technical Disclosure Bulletin, vol. 25, No. 4, Sep. 1982, pp. 1910-1911.

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