Charge splitting resistive layer for a semiconductor gamma camer

Details Charge splitting resistive layer for a semiconductor gamma camer Charge splitting resistive layer for a semiconductor gamma camer

1979-10-19

1981-09-29

Edlow, Martin H.

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

357 30, 357 58, 357 51, 357 31, 250370, H01L 2714

Patent

active

042926459

ABSTRACT:
An improved semiconductor gamma camera is disclosed. The gamma camera includes a p-i-n semiconductor diode which detects the presence and energy of gamma radiation from a source. Typically the source is radioactive material in a patient organ which is detected and then interpreted by a doctor while diagnosing the condition of that organ. The detector includes an improved electrical connection technique to allow the p-i-n diode to be connected to electronic circuitry necessary to provide spatial and energy information. In the improved camera first a passivation layer is deposited on both faces of the p-i-n diode and then a resistive layer is applied to form a reliable easily reproduced electrical contact to the junction. These two layers in combination prevent foreign matter from contacting the semiconductor material comprising the detector while providing interconnection to the electronic circuitry.

REFERENCES:
patent: 3691389 (1972-09-01), Ellis
patent: 3761711 (1973-09-01), Hall
patent: 4029965 (1977-06-01), Carlson
patent: 4047037 (1977-09-01), Schlosser
patent: 4055765 (1977-10-01), Gerber
patent: 4055766 (1977-10-01), Miller
patent: 4163240 (1979-07-01), Swinehart

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