Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1993-07-06
1994-07-05
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257232, 257451, 257455, H01L 29796, H01L 2714, H01L 2956
Patent
active
053269969
ABSTRACT:
Methods and apparatus for implementing charge skimming and variable integration time in focal plane arrays formed in a silicon substrate. The present invention provides for pulsing a field plate that lies over a diode disposed in the substrate in order to provide for charge skimming and variable integration time. The field plate is normally dc biased to suppress diode edge leakage. No additional structure is needed in the silicon substrate, and basic readout clocking is unaffected. Any interline transfer focal plane array can benefit from using the principles of the present invention.
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Float Kenneth W.
Karambelas Anthony W.
Loral Fairchild Corp.
Munson Gene M.
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