Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2007-01-09
2007-01-09
Turner, Archene (Department: 1775)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S012000, C257S094000
Reexamination Certificate
active
10314858
ABSTRACT:
A charge separation heterojunction structure which uses a fullerene polymer film as a part of its constituent materials and which may be used to produce a solar cellor a light emitting diode superior in durability, physical properties of electrons and economic merits. The heterojunction structure is such a structure in which an electron-donating electrically conductive high-polymer film and an electron-accepting fullerene polymer film are layered between a pair of electrodes at least one of which is light transmitting. In forming the layers, the fullerene polymer film is identified using in particular the Raman and Nexafs methods in combination so that upper layers are formed after identifying the polymer film.
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Ata Masafumi
Ramm Matthias
Research Institute of Innovative Technology for the Earth
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
Turner Archene
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