Charge pumping structure for a substrate bias generator

Details Charge pumping structure for a substrate bias generator Charge pumping structure for a substrate bias generator

1984-08-13

1987-06-02

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307303, 357 48, 357 86, H01L 2704, H01L 1900, H03K 3354

Patent

active

046706690

ABSTRACT:
A charge pumping structure is disclosed for use in a substrate bias voltage generator. It includes a capacitor on a substrate region for coupling to a first node periodic voltage signals received at a second node. A first diode structure provides a current path from the first node to the substrate and a second diode structure provides a current path between the first node and a reference potential, which is typically the ground. The first diode structure includes a PN junction diode, an isolation ring for collecting minority charge carriers injected into the substrate and is constructed on a portion of the substrate that has a lower doping concentration than the underlying substrate portion establishing a built-in electric field which inhibits the flow of minority carriers from the first diode to the underlying substrate. The second diode structure may include a pocket type PN junction diode constructed so that majority carriers are prevented from moving back into the substrate from which the substrate bias voltage generator will have to remove them.

REFERENCES:
patent: 3794862 (1974-02-01), Jenne
patent: 3878551 (1975-04-01), Callahan, Jr.
patent: 3931634 (1976-01-01), Knight
patent: 4001869 (1977-01-01), Brown
patent: 4027325 (1977-07-01), Genesi
patent: 4115794 (1978-09-01), De La Moneda
patent: 4117507 (1978-09-01), Pacor
patent: 4163245 (1979-07-01), Kinoshita
patent: 4211941 (1980-07-01), Schade, Jr.
patent: 4223238 (1980-09-01), Parkinson et al.
patent: 4255677 (1981-03-01), Boonstra et al.
patent: 4255756 (1981-03-01), Shimotori et al.
patent: 4336466 (1982-06-01), Sud et al.
patent: 4377756 (1983-03-01), Yoshihara et al.
patent: 4378506 (1983-03-01), Taira
patent: 4384218 (1983-05-01), Shimotori et al.
patent: 4403158 (1983-09-01), Slemmer
patent: 4430581 (1984-02-01), Mogi et al.
patent: 4439692 (1984-03-01), Beekmans et al.
patent: 4450515 (1984-05-01), Takemae et al.
patent: 4458158 (1984-07-01), Mayrand
patent: 4471290 (1984-09-01), Yamaguchi
patent: 4491746 (1985-01-01), Koike
patent: 4535530 (1985-08-01), Denda et al.
patent: 4539490 (1985-09-01), Ariizumi et al.
patent: 4559548 (1985-12-01), Iizuka et al.
H. Frantz et al, "MOSFET Substrate Bias-Voltage Generator", IBM Technical Disclosure Bulletin, vol. 11, No. 10, Mar. 1969, p. 1219.

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