Charge pumping device with integrated regulating capacitor and m

Details Charge pumping device with integrated regulating capacitor and m Charge pumping device with integrated regulating capacitor and m

1977-12-16

1978-09-19

Clawson, Jr, Joseph E.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307221D, 357 20, 357 24, 357 41, 357 51, 357 91, 365182, H01L 2978

Patent

active

041157940

ABSTRACT:
An improved charge pumping device is disclosed for charge storage memory elements and substrate bias control. By selectively ion-implanting the substrate of the charge pump, its output current is substantially increased and its losses by charge dissipation are reduced. Charge pumps are used to charge a substrate-series capacitor combination to a desired bias point. In the substrate bias application, by integrating the series capacitor with the charge pump on the semiconductor chip and making the capacitor an integral part of a low resistance conductive blanket implant, the voltage regulation of the biasing circuit is improved.

REFERENCES:
patent: 3794862 (1974-02-01), Jenne
patent: 3860454 (1975-01-01), DeWitt et al.
D. Spampinato et al., "Single Electrode One-Device Cell," IBM Tech. Discl. Bull., vol. 15, #6, Nov. 1972, pp. 2019-2020.
M. Ebel et al., "A 4096-Bit High Speed ECL Compatible Ram, " 1975 IEEE Int. S-S Ckts. Conf. Proc., Feb. 13, 1975, pp. 104, 105, 219.

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