Charge pump with controlled ramp rate

Details Charge pump with controlled ramp rate Charge pump with controlled ramp rate

1993-03-08

1994-11-15

Sikes, William L.

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Slope control of leading or trailing edge of rectangular or...

327291, 327536, H03G 1100

Patent

active

053651219

ABSTRACT:
A charge pump with controlled ramp rate (200) includes a charge pump (65), an RC differentiator circuit (258), and a trigger circuit (238). The charge pump (65) receives a clock signal and provides a high output voltage for programming and erasing an EEPROM. The RC differentiator circuit (258) provides a control voltage that is proportional to the ramp-up rate of the high output voltage. The trigger circuit (238) receives the control voltage, and provides a control signal to disable the charge pump (65) if the ramp-up rate exceeds a predetermined rate. When the ramp-up rate falls below the predetermined rate, the trigger circuit (238) provides a control signal to enable the charge pump (65). The trigger circuit (238) has hysteresis to regulate its switching point. Controlling the ramp-up rate of the output voltage reduces the peak tunneling current in the EEPROM cell to increase reliability.

REFERENCES:
patent: 4326134 (1982-04-01), Owen et al.
patent: 5111064 (1992-05-01), Ward
patent: 5119339 (1992-06-01), Heusler
patent: 5138190 (1992-08-01), Yamazaki et al.
Duane Oto et al., "High-Voltage Regulation and Process Considerations for High-Density 5V-Only E2PROM's", IEEE Journal of Solid-State Circuits, vol. SC-18, No. 5, Oct. 1983, pp. 532-538.

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