Charge pump-type booster circuit

Details Charge pump-type booster circuit Charge pump-type booster circuit

2007-02-22

2008-09-23

Zweizig, Jeffrey S (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

Reexamination Certificate

active

07427891

ABSTRACT:
Provided is a charge pump circuit whose power efficiency is not reduced even when a threshold voltage of a transistor is increased by a substrate effect with an increase in the number of stages. A depletion transistor is used as an N-channel transistor included in an inverter of a high-voltage clock generating circuit. A P-channel enhancement transistor is used as a charge transfer device.

REFERENCES:
patent: 5889428 (1999-03-01), Young
patent: 6046626 (2000-04-01), Saeki et al.
patent: 6292048 (2001-09-01), Li
patent: 6535052 (2003-03-01), Myono
patent: 6970035 (2005-11-01), Tanimoto
patent: 7123077 (2006-10-01), Chiu et al.
patent: 2002/0130704 (2002-09-01), Myono et al.
Wu, et al., “MOS Charge Pumps for Low-Voltage Operation”, IEEE Journal of Solid-State Circuits, vol. 33, No. 4, Apr. 1998.

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