Charge pump substrate bias generator

Details Charge pump substrate bias generator Charge pump substrate bias generator

1975-02-24

1981-03-10

Larkins, William D.

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

357 23, 357 24, 357 41, 357 42, 357 43, H01L 2704

Patent

active

042556775

ABSTRACT:
A semiconductor device having an integrated circuit of which a region of one conductivity type is charged by supplying charge carriers from a zone of the opposite conductivity type to an inversion layer formed in the said region below a field electrode at which a voltage is set up. When the voltage is switched off, a part of the charge carriers recombine in the said region. According to the invention, the charge carriers are supplied from a supply conductor and an electronic switch is present between said conductor and the inversion layer, which switch prevents the flow back of charge carriers to the supply conductor when the inversion layer disappears.

REFERENCES:
patent: 3673428 (1972-06-01), Athanas
patent: 3760202 (1973-09-01), Kosonocky
patent: 3810125 (1974-05-01), Stein
patent: 3816769 (1974-06-01), Crowle
Frantz et al., "Mosfet Substrate Bias Voltage Generator", IBM Tech. Discl. Bull., vol. 11, No. 10, Mar. 1969, p. 1219.

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