Charge pump substrate bias circuit

Details Charge pump substrate bias circuit Charge pump substrate bias circuit

1992-05-21

1993-01-12

Sikes, William L.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

3072966, 307578, 307583, 307585, 307264, 307607, H03K 301, H03K 17687

Patent

active

051792966

ABSTRACT:
A charge pump circuit having a pumping capacitor is provided. A first terminal of the pumping capacitor is connected to a V.sub.CC power source through a P-MOS transistor, and grounded via an N-MOS transistor. The gates of these transistors receive a signal in which the HIGH level and the LOW level are alternately repeated. A second terminal of the pumping capacitor is grounded via an N-MOS transistor. The gate of the N-MOS transistor is connected to a terminal through a capacitor, and also to the second terminal of the pumping capacitor via an N-MOS transistor the gate of which is grounded. The second terminal is connected to an external circuit through an N-MOS transistor. The gate of the N-MOS transistor is connected to a terminal through a capacitor, and also to the output terminal through an N-MOS transistor the gate of which is connected to the node.

REFERENCES:
patent: 5023465 (1991-06-01), Douglas et al.

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