Charge pump operation in a non-volatile memory device

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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Details

C365S185250, C365S189090, C365S189110, C365S226000

Reexamination Certificate

active

07626865

ABSTRACT:
A charge pump in a memory device is activated to produce a programming voltage prior to data loading during a programming operation. During an initial programming cycle, first and second load voltages are charged from the charge pump. The first load is removed from the charge pump during a verify operation. The first load voltage is subsequently recharged by charge sharing from the second load voltage so that the charge pump is not initially necessary for recharging the first load voltage.

REFERENCES:
patent: 5740109 (1998-04-01), Morton et al.
patent: 5945870 (1999-08-01), Chu et al.
patent: 6259632 (2001-07-01), Khouri et al.
patent: 6259635 (2001-07-01), Khouri et al.
patent: 6278639 (2001-08-01), Hosono et al.
patent: 6356469 (2002-03-01), Roohparvar et al.
patent: 6385065 (2002-05-01), Roohparvar et al.
patent: 6438032 (2002-08-01), Pekny et al.
patent: 6480436 (2002-11-01), Confalonieri et al.
patent: 6498761 (2002-12-01), Banba et al.
patent: 6518828 (2003-02-01), Seo et al.
patent: 6538930 (2003-03-01), Ishii et al.
patent: 6560145 (2003-05-01), Martines et al.
patent: 6573780 (2003-06-01), Lin et al.
patent: 6633494 (2003-10-01), Roohparvar et al.
patent: 6661682 (2003-12-01), Kim et al.
patent: 6683488 (2004-01-01), Jin
patent: 6735118 (2004-05-01), Ogura et al.
patent: 6765428 (2004-07-01), Kim et al.
patent: 6785180 (2004-08-01), Cheung
patent: 6788578 (2004-09-01), Tang
patent: 6801455 (2004-10-01), Natori
patent: 6912172 (2005-06-01), Honma et al.
patent: 6933768 (2005-08-01), Hausmann
patent: 6937517 (2005-08-01), Pekny et al.
patent: 7274602 (2007-09-01), Arakawa
patent: 7385377 (2008-06-01), Pisasale et al.
patent: 7439797 (2008-10-01), Byeon et al.
patent: 2005/0057236 (2005-03-01), Telecco

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