Charge pump having reduced threshold voltage losses

Details Charge pump having reduced threshold voltage losses Charge pump having reduced threshold voltage losses

1996-02-05

1998-02-24

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

327530, G05F 110

Patent

active

057215090

ABSTRACT:
A charge pump (40) is implemented with several stages (30), including a control stage (50), in a manner integral with a ring-oscillator loop. The charge pump (40) is more efficient for producing voltage VBB to supply to a substrate well implementing circuitry such as a DRAM or SRAM (61), since there are no threshold voltage drops across any of the critical path transistors (M3) within the charge pump (40). This is accomplished by providing a boosted signal level from the proceeding stage (30). In the design, parasitic diode leakage is negligible.

REFERENCES:
patent: 4628215 (1986-12-01), Lou
patent: 4897774 (1990-01-01), Bingham et al.
patent: 5179296 (1993-01-01), Ito
patent: 5303190 (1994-04-01), Pelley, III
patent: 5381051 (1995-01-01), Morton
patent: 5581455 (1996-12-01), Rossi et al.

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