Static information storage and retrieval – Floating gate – Particular biasing
Patent
1998-09-16
2000-05-30
Elms, Richard
Static information storage and retrieval
Floating gate
Particular biasing
36518523, 36518909, G11C 1604
Patent
active
06069825&
ABSTRACT:
A self-decoding charge pump for charging word lines or bit lines of a semiconductor memory array such as an EEPROM includes a passive, parallel-plate ONO capacitor for coupling voltage pulses generated by an oscillator to a charge transfer node. The voltage pulses received at the charge transfer node control the transfer of increments of charge from a high-voltage generator to a selected word line. Large-area capacitive coupling may be used without causing significant carrier injection into the substrate. In one configuration exploiting the floating-gate EEPROM semiconductor geometry, plural stacked capacitors are used, allowing a doubling of the capacitance per surface area relative to a single-capacitor configuration. Plural oscillators generating lower-amplitude signals can be used with one high-voltage generator.
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patent: 4701637 (1987-10-01), Piro
patent: 4811292 (1989-03-01), Watanabe
patent: 4823317 (1989-04-01), Brahmbhatt
patent: 4831589 (1989-05-01), Brahmbhatt
patent: 5394365 (1995-02-01), Tsukikawa
Elms Richard
Nguyen Hien
Popovici Andrei D.
Turbo IC, Inc.
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