Charge pump for providing programming voltage to the word lines

Details Charge pump for providing programming voltage to the word lines Charge pump for providing programming voltage to the word lines

1982-02-08

1985-04-16

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307449, 307264, 307296A, 307578, 365230, H03K 19094, H03K 1920, H03K 402, G11C 800

Patent

active

045118116

ABSTRACT:
A charge pump for providing programming voltages to the word lines of a semiconductor memory array is disclosed. The charge pump, configured as a combination of enhancement and native MOS transistors, prevents DC current from flowing from the source of the programming voltage to ground through unselected word lines, and thereby permits the design of semiconductor programmable memory arrays having on-chip programming voltage generation, allowing for design of semiconductor programmable memory arrays which operate from a single voltage power supply.

REFERENCES:
patent: 4263664 (1981-04-01), Owen et al.
patent: 4368524 (1983-01-01), Nakamura et al.
patent: 4374430 (1983-02-01), Higuchi et al.
patent: 4382194 (1983-05-01), Nakano et al.
patent: 4404475 (1983-09-01), Drori et al.

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