Charge pump circuit for voltage boosting in integrated semicondu

Details Charge pump circuit for voltage boosting in integrated semicondu Charge pump circuit for voltage boosting in integrated semicondu

1997-02-25

1999-06-15

Wells, Kenneth B.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

For fault location

363 60, 307110, H03K 301

Patent

active

059125608

ABSTRACT:
A charge pump whose charge transfer switches are formed of charge transfer transistors and single pole, double throw (SPDT) switches each of which controls the gate of its corresponding transistor. Each SPDT switch has two throw contacts, one which is connected to the left diffusion of its corresponding charge transfer transistor and the other of which is connected to ground. Thus, the SPDT switch selectively connects the gate of the charge transfer transistor it controls between a diode connection (the first contact) and ground (the second contact). As a result, the charge transfer switches of the present invention are both fully on (when diode-connected) or fully off (when connected to ground).

REFERENCES:
patent: 5675279 (1997-10-01), Fujimoto et al.

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