Charge pump circuit for driving N-channel MOS transistors

Details Charge pump circuit for driving N-channel MOS transistors Charge pump circuit for driving N-channel MOS transistors

1986-08-18

1988-04-05

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307304, 307246, 307270, H03K 301, H03K 3353, H03K 1756

Patent

active

047361212

ABSTRACT:
This charge pump circuit comprises a capacitor connected with a first terminal thereof to a reference voltage point through a first switch element and with a second terminal thereof to a switching section. The switching section, which is arranged between a positive supply voltage line and the ground, is controlled so as to alternately and selectively connect the second terminal of the capacitor to the positive supply and to ground. The first terminal of the capacitor is further connected to the gate of the MOS transistor to be driven. During operation the switch section is controlled so as to alternately charge the capacitor and allow transfer of the charge of the capacitor to the MOS transistor gate, thereby achieving a fast charging of the MOS transistor and a low circuit dissipation in the DC mode.

REFERENCES:
patent: 4591738 (1986-05-01), Bialas, Jr. et al.
patent: 4633106 (1986-12-01), Backes et al.

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