Charge pump circuit

Details Charge pump circuit Charge pump circuit

2007-05-01

2007-05-01

Callahan, Timothy P. (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

C327S537000, C363S060000

Reexamination Certificate

active

11212918

ABSTRACT:
A leakage path through a parasitic diode in a charge transfer MOS transistor is cut off to prevent increase in the power consumption and loss of control of a charge pump circuit. A first charge transfer MOS transistor and a second charge transfer MOS transistor are N-channel type and are connected in series with each other. A ground electric potential VSS is supplied to a source of the first charge transfer MOS transistor as an input electric potential, and an output electric potential is obtained from an output terminal connected with a drain of the second charge transfer MOS transistor. A back gate of the first charge transfer MOS transistor is set by a first switching circuit to either an electric potential at a connecting node between the first and the second charge transfer MOS transistors or the ground electric potential VSS.

REFERENCES:
patent: 6448841 (2002-09-01), Milazzo
patent: 6831499 (2004-12-01), Oddone et al.
patent: 7084697 (2006-08-01), Kawagoshi
patent: 2003-033006 (2003-01-01), None

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