Charge pump circuit

Details Charge pump circuit Charge pump circuit

2005-09-20

2005-09-20

Tra, Quan (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

Reexamination Certificate

active

06946899

ABSTRACT:
Charge transfer MOS transistors M1and M2at front two stages are constructed of an N-channel type, and charge transfer MOS transistors at rear two stages are constructed of an P-channel type. Inverting level shift circuits S1and S2and non-inverting level shift circuits S3and S4, which can produces an intermediate potential are provided. Because of such a configuration, a charge pump circuit which can realize high efficiency and provide a large output current can be realized. In addition, the gate/source voltage Vgs (transistors are in the ON state) of the charge transfer MOS transistors can be uniformed to 2Vdd.

REFERENCES:
patent: 5029063 (1991-07-01), Lingstaedt et al.
patent: 5469110 (1995-11-01), Liao
patent: 5889428 (1999-03-01), Young
patent: 6160723 (2000-12-01), Liu
patent: 6373322 (2002-04-01), Kobayashi et al.
patent: 6480057 (2002-11-01), Ogura
Japanese Translation of Korean Office Action date Jun. 30, 2003.

Affiliated with

Also associated with

Rating

Charge pump circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Charge pump circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Charge pump circuit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3428860