Charge pump

Electric power conversion systems – Current conversion – With voltage multiplication means

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Details

327536, 307110, H03K 1900

Patent

active

055462960

ABSTRACT:
A charge pump assembly includes a storage capacitor having one terminal for a first supply potential and another terminal for pickup of an output potential. The assembly has one charge pump or two charge pumps being controlled by push-pull signals. Each charge pump includes a p-channel MOS transistor having a gate terminal being controlled by a first signal and having a drain-to-source path with one terminal being connected to the other terminal of the storage capacitor. A sliding capacitor has one terminal being connected to the other terminal of the drain-to-source path of the p-channel MOS transistor and another terminal being controlled by a second signal. An n-channel MOS transistor has a gate terminal being controlled by a third signal and a drain-to-source path being connected between a second supply potential and the one terminal of the sliding capacitor. A pulse shaper device is supplied by an oscillator device for generating the signals, in such a way that the p-channel MOS transistor is conducting only whenever the second signal is at a high level, and the n-channel MOS transistor is conducting only whenever the second signal is at a low level.

REFERENCES:
patent: 4633106 (1986-12-01), Backes et al.
patent: 5264743 (1993-11-01), Nakagome et al.
patent: 5270588 (1993-12-01), Choi
IEEE Journal of Solid-State Circuits, vol. 26, No. 4 Apr. 1991 (Nakagome et al.) "An Experimental 1.5-V 64-Mb DRAM" pp. 465-472.

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