Charge pump

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

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Details

327589, 327543, 327537, G05F 110

Patent

active

059399350

ABSTRACT:
Selected transistors in a charge pump circuit have their associated well regions tied to a capacitor electrode. As a result, the body effect in these devices is reduced, and, consequently, the threshold voltage is reduced as well. With a lower threshold voltage, these transistors allow the charge pump to quickly generate a voltage higher than the positive power supply voltage or a negative substrate bias voltage. In addition, the metal-insulator-semiconductor (MIS) capacitors in the charge pump preferably have their source/drain regions tied to an associated well region, thereby shorting the source/drain/well region junction. Thus, parasitic capacitances associated with these MIS capacitors is significantly reduced, further increasing the speed of the charge pump circuit.

REFERENCES:
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patent: 5023465 (1991-06-01), Douglas et al.
patent: 5126590 (1992-06-01), Chern
patent: 5266842 (1993-11-01), Park
patent: 5343088 (1994-08-01), Jeon
patent: 5394320 (1995-02-01), Blodgett
patent: 5394365 (1995-02-01), Tsukikawa
patent: 5493249 (1996-02-01), Manning
patent: 5544102 (1996-08-01), Tobita et al.
patent: 5673232 (1997-09-01), Furutani
patent: 5677645 (1997-10-01), Merritt
Adel S. Sedra, "Microelectronic circuits" 7 Pages, 1982.

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