Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1996-08-26
1998-01-27
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257258, 257262, H01L 2980, H01L 31112
Patent
active
057124981
ABSTRACT:
A charge modulation device having a semiconductor region of a first conductivity type. An epitaxial layer of second conductivity type is provided on a portion of the semiconductor region so as to define an FET channel region. A first epitaxial region of the second conductivity type is provided adjacent to and in contact with the epitaxial layer so as to define an FET drain region, the first epitaxial region being electrically isolated from the semiconductor region. A second epitaxial region of the second conductivity type is provided adjacent to and in contact with the epitaxial layer so as to define an FET source region, the second epitaxial region being electrically isolated from the semiconductor region. A third epitaxial region of the first conductivity type or a metal oxide semiconductor is provided to the channel region between the source and drain regions.
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Kosicki Bernard B.
Reich Robert K.
Savoye Eugene D.
Fahmy Wael
Massachusetts Institute of Technology
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