Amplifiers – With semiconductor amplifying device – Including atomic particle or radiant energy impinging on a...
Patent
1999-06-04
2000-09-19
Mottola, Steven J.
Amplifiers
With semiconductor amplifying device
Including atomic particle or radiant energy impinging on a...
250214A, H03F 308
Patent
active
06121843&
ABSTRACT:
An amplifier circuit, referred to as a charge mode capacitor transimpedance amplifier (or CM-CTIA) an input node (IN) and an output node (OUT), and includes a transistor (M.sub.IN) having a gate terminal (G) coupled to the input node, a source terminal (S), and a drain terminal (D) coupled to the output node, a first capacitance (C.sub.FB) coupled between the gate terminal and the drain terminal, a second capacitance (C.sub.S) coupled between the source terminal and a first potential (GND), a third capacitance (C.sub.D) coupled between the drain terminal and the first potential or another fixed potential, a first switch (SW1) coupled between a second potential and the drain terminal, and a second switch (SW2) coupled between a third potential (V.sub.RESET) and the gate terminal. During use, the input node is coupled to an output of a radiation detector, such as a photovoltaic IR detector (12) that forms one element or pixel of an array of IR detectors. An open loop gain of the amplifier circuit is established by a ratio of the value of the second capacitance to the value of the third capacitance, and a transimpedance of the amplifier circuit is established by the value of the first capacitance, the value of the second capacitance, and the value of the third capacitance.
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Hewitt Mary J.
Vampola John L.
Lenzen, Jr. Glenn H.
Mottola Steven J.
Raytheon Company
Schubert William C.
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