Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2009-11-19
2011-10-18
Nguyen, Viet (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S163000, C365S185240, C365S185280, C365S204000
Reexamination Certificate
active
08040729
ABSTRACT:
A memory cell array including a data line; a capacitor; and a transistor coupled between the data line and the capacitor. At least one of the capacitor and the transistor includes a material with a mutable electrical characteristic.A memory cell array including a first transistor coupled between a first node, a second node, and a third node; and a second transistor coupled between the second node and a fourth node. The first transistor includes a material with a mutable electrical characteristic.
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Ng Tse Nga
Sambandan Sanjiv
Street Robert A.
Wong William S.
Marger & Johnson & McCollom, P.C.
Nguyen Viet
Palo Alto Research Center Incorporated
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