Charge loss compensation during programming of a memory device

Details Charge loss compensation during programming of a memory device Charge loss compensation during programming of a memory device

2008-05-20

2011-12-27

Hur, J. H. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185020, C365S185030, C365S185170, C365S185220, C365S185200, C365S185240

Reexamination Certificate

active

08085591

ABSTRACT:
In programming a selected word line of memory cells, a first program verify or read operation is performed, after one page of a selected word line is programmed, in order to determine a first quantity of memory cells that have been programmed to a predetermined reference point in the programmed first page distribution. Prior to programming the second page of the selected word line, a second program verify or read operation is performed to determine a second quantity of cells that are still at the reference point. The difference between the first and second quantities is an indication of the quantity of cells that experienced quick charge loss. The difference is used to determine an adjustment voltage for the second page verification operation after programming of the second page.

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