Charge injection input network for semiconductor charge transfer

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307221D, 307304, 357 68, H01L 2978

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active

040104842

ABSTRACT:
A semiconductor charge transfer device (CTD) has an input network which includes an added gate region held at constant voltage, the added gate region being located between an input semiconductor charge injection region (input diode) and a signal gate region. In this way the amount of signal charge transferred into the CTD is less sensitive to unavoidable noise in the clock voltages which are applied to electrodes associated with the bulk of the CTD for the purpose of shifting the signal charge therethrough; and the linearity of the ratio of injected charge to signal voltage is also improved.

REFERENCES:
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patent: 3845295 (1974-10-01), Williams et al.
patent: 3881117 (1975-04-01), Tompsett
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