Charge-giving body, and pattern-formed body using the same

Stock material or miscellaneous articles – Structurally defined web or sheet – Continuous and nonuniform or irregular surface on layer or...

Reexamination Certificate

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C428S620000, C428S195100

Reexamination Certificate

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06916522

ABSTRACT:
A main object of the present invention is to provide a charge-giving body capable of forming a pattern having a minute structure on a surface of a semiconductor by a simple process; and a minute pattern-formed body. The present invention is a charge-giving body, comprising a defected region in which defect is introduced into a crystal structure in a crystalline semiconductor surface, charge being given from the defected region.

REFERENCES:
patent: 6110834 (2000-08-01), Kinoshita et al.
patent: 6174727 (2001-01-01), Homma et al.
patent: 19829863 (1999-05-01), None
L. Santinacci, T. Djenizian, and P. Schmuki, “Atomic Force Microscopy-Induced Nanopatterning of Si(100) Surfaces” Journal of The Electrochemical Society, 148 (9) C640-C646 (2001).

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